0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 features high dc current gain.h fe =130 typ.(v ce =3.0v,i c =15ma) high voltage v ceo : 130v absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 150 v collector-emitter voltage v ceo 130 v emitter-base voltage v ebo 5v collector current i c 50 ma power dissipation p d 150 mw junction temperature t j 125 storage temperature t stg -55 to +125 h fe classification markingn2n3n4 hfe 90 180 135 270 200 400 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb =130v,i e =0 0.1 a emitter cutoff current i ebo v eb =5v,i c =0 0.1 a v ce =3v , i c = 15ma 90 200 400 v ce =3v , i c = 1ma 70 180 collector-emitter saturation voltage * v ce(sat) i c =50ma,i b =5ma 0.1 0.3 v base-emitter saturation voltage * v be(sat) i c =50ma,i b = 5ma 0.73 1.0 v output capacitance c ob v cb =10v,i e =0,f=1.0mhz 2.3 pf transiston frequency f t v ce =10v,i e = -10ma 120 mhz * pulse test: tp 350 s; d 0.02. dc current gain * h fe sales@twtysemi.com 1 of 3 http://www.twtysemi.com 2SC1653 product specification 4008-318-123
typical characteristics fig.1 total power dissipation vs. ambient temperature fig.2 collector current vs. collector to emitter voltage fig.3 collector current vs. base to emitter voltage fig.4 collector current vs. collector to emitter voltage fig.5 dc current gain vs. collector current sales@twtysemi.com 2 of 3 http://www.twtysemi.com 2SC1653 product specification 4008-318-123
2SC1653 fig.6 base and collector saturation voltage vs. collector current fig.7 gain bandwidth product vs. emitter current fig.8 input and output capacitance vs. reverse voltage sales@twtysemi.com 3 of 3 http://www.twtysemi.com product specification 4008-318-123
|
